An equivalent transistor macromodel, correctly and quickly predicting currents and voltages on the element is needed. The finite element method (FEM) simulators accurately analyse losses in components, but the associated simulation time is so long that they cannot be used for complex topologies in power electronics. New topologies, reducing the losses in the semi-conductor devices, are often proposed and have to be validated through a simulation tool.
The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV.
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